Invention Grant
US09171966B2 Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release
有权
将气态化学品植入到形成于中间介质层中的空腔中，用于随后的热扩散释放
- Patent Title: Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release
- Patent Title (中): 将气态化学品植入到形成于中间介质层中的空腔中，用于随后的热扩散释放
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Application No.: US14352057Application Date: 2012-04-19
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Publication No.: US09171966B2Publication Date: 2015-10-27
- Inventor: Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
- Applicant: Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
- Applicant Address: US CA San Jose
- Assignee: CAVENDISH KINETICS, INC.
- Current Assignee: CAVENDISH KINETICS, INC.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- International Application: PCT/US2012/034210 WO 20120419
- International Announcement: WO2012/145485 WO 20121026
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81C1/00 ; B81B3/00 ; B81B7/00
Abstract:
The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
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