Invention Grant
- Patent Title: Optically assist-triggered wide bandgap thyristors having positive temperature coefficients
- Patent Title (中): 具有正温度系数的光辅助触发宽带隙晶闸管
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Application No.: US13461049Application Date: 2012-05-01
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Publication No.: US09171977B2Publication Date: 2015-10-27
- Inventor: Qingchun Zhang
- Applicant: Qingchun Zhang
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L31/111
- IPC: H01L31/111 ; H01L31/0312 ; H01L27/144 ; H01L29/74 ; H01L29/16
Abstract:
A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drift layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the base layer. The thickness and doping concentration of the carrier injection layer are selected to reduce minority carrier injection by the carrier injection layer in response to an increase in operating temperature of the thyristor. A cross-over current density at which the thyristor shifts from a negative temperature coefficient of forward voltage to a positive temperature coefficient of forward voltage is thereby reduced.
Public/Granted literature
- US20120319133A1 OPTICALLY ASSIST-TRIGGERED WIDE BANDGAP THYRISTORS HAVING POSITIVE TEMPERATURE COEFFICIENTS Public/Granted day:2012-12-20
Information query
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