Invention Grant
- Patent Title: Shut-off circuits for latched active ESD FET
- Patent Title (中): 闭锁电路用于锁存的有源ESD FET
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Application No.: US14101429Application Date: 2013-12-10
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Publication No.: US09172243B2Publication Date: 2015-10-27
- Inventor: John Eric Kunz, Jr. , Jonathan Scott Brodsky
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS CORPORATED
- Current Assignee: TEXAS INSTRUMENTS CORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Frank D. Cimino
- Main IPC: H02H3/22
- IPC: H02H3/22 ; H02H9/04 ; H01L27/02

Abstract:
An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.
Public/Granted literature
- US20140185168A1 SHUT-OFF CIRCUITS FOR LATCHED ACTIVE ESD FET Public/Granted day:2014-07-03
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