Invention Grant
US09172243B2 Shut-off circuits for latched active ESD FET 有权
闭锁电路用于锁存的有源ESD FET

Shut-off circuits for latched active ESD FET
Abstract:
An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.
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