Invention Grant
- Patent Title: Interconnect structures and methods of making the same
- Patent Title (中): 互连结构和制作方法
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Application No.: US13638536Application Date: 2011-03-31
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Publication No.: US09173282B2Publication Date: 2015-10-27
- Inventor: Pulugurtha Markondeya Raj , Nitesh Kumbhat , Venkatesh Sundaram , Rao R. Tummala
- Applicant: Pulugurtha Markondeya Raj , Nitesh Kumbhat , Venkatesh Sundaram , Rao R. Tummala
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Sanders LLP
- Agent Ryan A. Schneider; Elizabeth-Ann Weeks
- International Application: PCT/US2011/030833 WO 20110331
- International Announcement: WO2011/123717 WO 20111006
- Main IPC: H01R9/00
- IPC: H01R9/00 ; H05K1/02 ; H01L23/498 ; H01L25/065 ; H01R12/52 ; H01R12/71 ; H05K3/34 ; H05K1/18 ; H05K3/10 ; H01L29/41 ; H01L23/13 ; H01L25/10 ; H01L23/00

Abstract:
The various embodiments of the present invention provide a stress-relieving, second-level interconnect structure that is low-cost and accommodates TCE mismatch between low-TCE packages and PCBs. The various embodiments of the interconnect structure are reworkable and can be scaled to pitches from about 1 millimeter (mm) to about 150 micrometers (μm). The interconnect structure comprises a dielectric body element and at least one interconnection array that provides a conductive path between two electronic components. Each interconnection array comprises a plurality of wires that provide both conductivity and compliance to the overall interconnect structure. The versatility and scalability of the interconnect structure of the present invention make it a desirable structure to utilize in current two-dimensional and ever-evolving three-dimensional IC structures.
Public/Granted literature
- US20130107485A1 INTERCONNECT STRUCTURES AND METHODS OF MAKING THE SAME Public/Granted day:2013-05-02
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