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US09174305B2 Laser processing apparatus including plasma detecting means 有权
包括等离子体检测装置的激光加工装置

Laser processing apparatus including plasma detecting means
Abstract:
A laser processing apparatus removes a sapphire substrate from an optical device wafer configured by forming an optical device layer on the front side of the sapphire substrate through a buffer layer. A chuck table holds the optical device wafer. A pulsed laser beam is applied to the optical device wafer to break the buffer layer, and the light intensity of plasma light produced in the buffer layer by the application of the pulsed laser beam is detected and displayed. The light intensity of a predetermined wavelength region of the plasma light generated from a substance forming the buffer layer is detected.
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