Invention Grant
- Patent Title: Dispersions of submicron doped silicon particles
- Patent Title (中): 亚微米掺杂硅颗粒的分散体
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Application No.: US14064712Application Date: 2013-10-28
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Publication No.: US09175174B2Publication Date: 2015-11-03
- Inventor: Nobuyuki Kambe
- Applicant: NanoGram Corporation
- Applicant Address: US CA Milpitas
- Assignee: NanoGram Corporation
- Current Assignee: NanoGram Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Dardi & Herbert, PLLC
- Agent Peter S. Dardi
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C09D5/03 ; B22F1/00 ; B22F9/24 ; B82Y30/00 ; C01B21/068 ; C01B25/45 ; C01B31/36 ; C01B33/18 ; C01F7/30 ; C01F7/44 ; C01F17/00 ; C01G9/02 ; C01G19/02 ; C01G23/00 ; C01G31/00 ; C01G31/02 ; C01G45/02 ; C01G45/12 ; C01G51/00 ; C01G53/00 ; C04B35/44

Abstract:
Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.
Public/Granted literature
- US20140047996A1 DISPERSIONS OF SUBMICRON DOPED SILICON PARTICLES Public/Granted day:2014-02-20
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