Invention Grant
US09175393B1 Tiled showerhead for a semiconductor chemical vapor deposition reactor
有权
用于半导体化学气相沉积反应器的瓷砖花洒
- Patent Title: Tiled showerhead for a semiconductor chemical vapor deposition reactor
- Patent Title (中): 用于半导体化学气相沉积反应器的瓷砖花洒
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Application No.: US13222890Application Date: 2011-08-31
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Publication No.: US09175393B1Publication Date: 2015-11-03
- Inventor: Gregg Higashi , Khurshed Sorabji , Lori D. Washington , Andreas Hegedus
- Applicant: Gregg Higashi , Khurshed Sorabji , Lori D. Washington , Andreas Hegedus
- Applicant Address: US CA Sunnyvale
- Assignee: Alta Devices, Inc.
- Current Assignee: Alta Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Thomas Schneck; Gina McCarthy
- Main IPC: C23C16/50
- IPC: C23C16/50 ; H01L21/306 ; C23F1/00 ; C23C16/455 ; C23C16/458

Abstract:
A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.
Information query
IPC分类: