Invention Grant
- Patent Title: Atomic layer deposition chamber with multi inject
- Patent Title (中): 具有多次注入的原子层沉积室
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Application No.: US13043189Application Date: 2011-03-08
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Publication No.: US09175394B2Publication Date: 2015-11-03
- Inventor: Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
- Applicant: Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/455 ; H01J37/32 ; H01L21/28 ; H01L21/31 ; H01L21/02 ; H01L21/314

Abstract:
Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.
Public/Granted literature
- US20110223334A1 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT Public/Granted day:2011-09-15
Information query
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