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US09176184B2 Semiconductor device burn-in stress method and system 有权
半导体器件老化应力法和系统

Semiconductor device burn-in stress method and system
Abstract:
Burn-in (BI) stress using stress patterns with pin-specific power characteristics. A control device for each conductive pathway from BI board (BIB) contacts to device under test (DUT) connectors/contacts can adjust power delivered to a respective connector/contact responsive to a controller. The control devices can be included in the BIB or an interposer (IP) can be used with existing equipment. Each control device can include a regulator, such as a latchable array of field effect transistors that can regulate power delivered to a respective package connector.
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