Invention Grant
US09176241B2 Position-sensitive readout modes for digital silicon photomultiplier arrays 有权
数位硅光电倍增管阵列的位置敏感读出模式

  • Patent Title: Position-sensitive readout modes for digital silicon photomultiplier arrays
  • Patent Title (中): 数位硅光电倍增管阵列的位置敏感读出模式
  • Application No.: US14234650
    Application Date: 2012-07-27
  • Publication No.: US09176241B2
    Publication Date: 2015-11-03
  • Inventor: Thomas Frach
  • Applicant: Thomas Frach
  • Applicant Address: NL Eindhoven
  • Assignee: Koninklijke Philips N.V.
  • Current Assignee: Koninklijke Philips N.V.
  • Current Assignee Address: NL Eindhoven
  • International Application: PCT/IB2012/053837 WO 20120727
  • International Announcement: WO2013/018006 WO 20130207
  • Main IPC: G01T1/24
  • IPC: G01T1/24 H04N5/369 G01T1/20 G01T1/29
Position-sensitive readout modes for digital silicon photomultiplier arrays
Abstract:
A photon detector (10) includes a detector array (12) comprising single photon avalanche diode (SPAD) detectors (14) configured to break down responsive to impingement of a photon. Trigger circuitry (34) is configured to generate a trigger signal responsive to break down of a SPAD detector of the detector array. Latches (20, 22) are configured to store position coordinates of SPAD detectors of the detector array that are in break down. The latches are configured to latch responsive to a trigger signal generated by the trigger circuitry. The latches may include row latches (22) each connecting with a logical “OR” combination of SPAD detectors of a corresponding row of the detector array, and column latches (20) each connecting with a logical “OR” combination of SPAD detectors of a corresponding column of the detector array. Time to digital converter (TDC) circuitry (28) may generate a digital time stamp for the trigger signal.
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