Invention Grant
- Patent Title: Translation layer in a solid state storage device
- Patent Title (中): 翻译层在固态存储设备中
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Application No.: US14614623Application Date: 2015-02-05
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Publication No.: US09176868B2Publication Date: 2015-11-03
- Inventor: Troy Manning
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/00 ; G06F12/02 ; G11C16/10

Abstract:
Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.
Public/Granted literature
- US20150149712A1 TRANSLATION LAYER IN A SOLID STATE STORAGE DEVICE Public/Granted day:2015-05-28
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