Invention Grant
- Patent Title: Semiconductor device for wireless communication
- Patent Title (中): 半导体装置用于无线通信
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Application No.: US13272262Application Date: 2011-10-13
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Publication No.: US09177182B2Publication Date: 2015-11-03
- Inventor: Yuichi Okuda
- Applicant: Yuichi Okuda
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2010-242257 20101028
- Main IPC: G06K7/10
- IPC: G06K7/10 ; G06K19/07 ; H01L27/02 ; H01L27/088 ; H01L27/092

Abstract:
Provided is a semiconductor device for wireless communication which achieves a reduction in leakage power and allows an improvement in power efficiency. For example, to external terminals, an antenna driver section for driving an antenna and a rectifying section for rectifying input power from the antenna are coupled. The antenna driver section includes pull-up PMOS transistors and pull-down NMOS transistors. In the rectifying section, a power supply voltage generated by a full-wave rectifying circuit is boosted by a voltage boosting circuit. For example, when a supply of a power supply voltage from a battery is stopped, a power supply voltage resulting from the boosting by the voltage boosting circuit is supplied to the bulk of each of the pull-up PMOS transistors.
Public/Granted literature
- US20120106219A1 SEMICONDUCTOR DEVICE FOR WIRELESS COMMUNICATION Public/Granted day:2012-05-03
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