Invention Grant
US09177617B2 Methods circuits apparatuses and systems for providing current to a non-volatile memory array and non-volatile memory devices produced accordingly
有权
用于向非易失性存储器阵列和非易失性存储器件提供电流的方法电路装置和系统相应地产生
- Patent Title: Methods circuits apparatuses and systems for providing current to a non-volatile memory array and non-volatile memory devices produced accordingly
- Patent Title (中): 用于向非易失性存储器阵列和非易失性存储器件提供电流的方法电路装置和系统相应地产生
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Application No.: US14048076Application Date: 2013-10-08
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Publication No.: US09177617B2Publication Date: 2015-11-03
- Inventor: Alexander Kushnarenko
- Applicant: Spansion LLC
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Agency: Professional Patent Solutions
- Agent Vladimir Sherman
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/14 ; G11C11/56 ; G11C16/30 ; G05F1/56 ; G05F1/59

Abstract:
Disclosed are methods, circuits, apparatuses and systems for providing power to a dynamic load such as a non-volatile memory array. According to embodiments, a voltage source may be adapted to generate and output a supply current at substantially a target voltage through a regulating transistor whose channel is in series between an output terminal of said charge pump and an input terminal of said NVM array. A discharge circuit branch coupled to an output terminal of the regulating transistor may be adapted to drain away current from the regulating transistor output terminal when a voltage at the regulating transistor output terminal exceeds a first defined threshold voltage. A bulk regulating circuit branch coupled to a bulk of the regulating transistor may be adapted to reduce a bulk-voltage of the regulating transistor when a voltage at the regulating transistor output terminal exceeds a defined threshold voltage.
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