Invention Grant
- Patent Title: Fast bit-line pre-charge scheme
- Patent Title (中): 快速位线预充电方案
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Application No.: US13600867Application Date: 2012-08-31
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Publication No.: US09177621B2Publication Date: 2015-11-03
- Inventor: Hung-Chang Yu , Ku-Feng Lin
- Applicant: Hung-Chang Yu , Ku-Feng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12 ; G11C11/4094

Abstract:
A device includes a first switch configured to control a connection between a first voltage node and a capacitor, and a second switch configured to control a connection between a common charge node and the capacitor. The device further includes a plurality of bit-lines, and a plurality of bit-line charge switches, each configured to control a connection between a respective one of the plurality of bit-lines and the common charge node.
Public/Granted literature
- US20140064000A1 Fast Bit-Line Pre-Charge Scheme Public/Granted day:2014-03-06
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