Invention Grant
- Patent Title: E-beam enhanced decoupled source for semiconductor processing
- Patent Title (中): 用于半导体处理的电子束增强去耦源
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Application No.: US13357003Application Date: 2012-01-24
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Publication No.: US09177756B2Publication Date: 2015-11-03
- Inventor: John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
- Applicant: John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23F1/00 ; H01J37/04 ; H01J37/32
Abstract:
A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
Public/Granted literature
- US20120258601A1 E-Beam Enhanced Decoupled Source for Semiconductor Processing Public/Granted day:2012-10-11
Information query
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