Invention Grant
- Patent Title: Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
- Patent Title (中): 在基板上形成碳化硅膜的半导体装置的制造方法和基板的制造方法
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Application No.: US13732460Application Date: 2013-01-02
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Publication No.: US09177799B2Publication Date: 2015-11-03
- Inventor: Yoshinori Imai , Hideji Shibata , Takafumi Sasaki
- Applicant: HITACHI KOKUSAI ELECTRIC, INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger P.C.
- Priority: JP2009-120882 20090519; JP2010-086380 20100402
- Main IPC: C30B25/14
- IPC: C30B25/14 ; H01L21/205 ; C23C16/32 ; C23C16/44 ; C23C16/455 ; C30B25/16 ; C30B29/36 ; H01L21/02
Abstract:
Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
Public/Granted literature
- US20130122692A1 Semiconductor Device Manufacturing Method and Substrate Manufacturing Method Public/Granted day:2013-05-16
Information query
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