Invention Grant
- Patent Title: Methods for fabricating three-dimensional nano-scale structures and devices
- Patent Title (中): 制造三维纳米级结构和器件的方法
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Application No.: US14238547Application Date: 2012-08-21
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Publication No.: US09177817B2Publication Date: 2015-11-03
- Inventor: John G. Hartley , Ravi K. Bonam
- Applicant: John G. Hartley , Ravi K. Bonam
- Applicant Address: US NY Albany
- Assignee: THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
- Current Assignee: THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
- Current Assignee Address: US NY Albany
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- International Application: PCT/US2012/051650 WO 20120821
- International Announcement: WO2013/028650 WO 20130228
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/308 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/075 ; G03F7/095 ; G03F7/20 ; G03F7/32 ; G03F7/38 ; B81C1/00 ; H01L29/02
Abstract:
A method of fabricating a 3 dimensional structure, includes: forming a stack of at least 2 layers of photo resist material having different photo resist sensitivities upon a substrate; exposing the stack to beams of electromagnetic radiation or charged particles of different dosages to achieve selective solubility along a height of the stack; and dissolving soluble portions of the stack with a solvent to produce a 3 dimensional structure of desired geometry.
Public/Granted literature
- US20140191375A1 METHODS FOR FABRICATING THREE-DIMENSIONAL NANO-SCALE STRUCTURES AND DEVICES Public/Granted day:2014-07-10
Information query
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