Invention Grant
- Patent Title: Barrier layer stack for bit line air gap formation
- Patent Title (中): 用于位线气隙形成的阻挡层堆叠
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Application No.: US14496360Application Date: 2014-09-25
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Publication No.: US09177853B1Publication Date: 2015-11-03
- Inventor: Takuya Futase , Katsuo Yamada , Tomoyasu Kakegawa , Noritaka Fukuo , Yuji Takahashi
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/768 ; H01L21/764
Abstract:
Air gaps are formed between conductive metal lines that have an inner barrier layer and an outer barrier layer. An etch step to remove sacrificial material is performed under a first set of process conditions producing a byproduct that suppresses further etching. A byproduct removal step performed under a second set of process conditions removes the byproduct.
Public/Granted literature
- US20150332953A1 BARRIER LAYER STACK FOR BIT LINE AIR GAP FORMATION Public/Granted day:2015-11-19
Information query
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