A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring.