Invention Grant
- Patent Title: High-frequency semiconductor package and high-frequency semiconductor device
- Patent Title (中): 高频半导体封装和高频半导体器件
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Application No.: US14093849Application Date: 2013-12-02
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Publication No.: US09177881B2Publication Date: 2015-11-03
- Inventor: Yoshiyuki Ikuma , Masatoshi Suzuki
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-045637 20130307
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/552 ; H01L23/66 ; H01L23/045 ; H01L23/20

Abstract:
Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.
Public/Granted literature
- US20140252569A1 HIGH-FREQUENCY SEMICONDUCTOR PACKAGE AND HIGH-FREQUENCY SEMICONDUCTOR DEVICE Public/Granted day:2014-09-11
Information query
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