Invention Grant
- Patent Title: Semiconductor capacitor
- Patent Title (中): 半导体电容
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Application No.: US13966294Application Date: 2013-08-14
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Publication No.: US09177909B2Publication Date: 2015-11-03
- Inventor: Hsueh-Hao Shih
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/522 ; H01L49/02

Abstract:
A semiconductor capacitor is includes a substrate, a plurality of odd layers formed on the substrate, and a plurality of even layers formed on the substrate. Each odd layer includes a plurality of first odd fingers and a first odd terminal electrically connected thereto, and a plurality of second odd fingers and a second odd terminal electrically connected thereto. Each even layer includes a plurality of first even fingers and a first even terminal electrically connected thereto, and a plurality of second even fingers and a second even terminal electrically connected thereto. The semiconductor capacitor further includes at least a first odd connecting structure electrically connecting the first odd terminals, at least a second odd connecting structure electrically connecting the second odd terminals, at least a first even connecting structure electrically connecting the first even terminals, and at least a second even connecting structure electrically connecting the second even terminals.
Public/Granted literature
- US20150048482A1 SEMICONDUCTOR CAPACITOR Public/Granted day:2015-02-19
Information query
IPC分类: