Invention Grant
- Patent Title: Interconnect structures for integrated circuits and their formation
- Patent Title (中): 集成电路的互连结构及其形成
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Application No.: US13449452Application Date: 2012-04-18
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Publication No.: US09177910B2Publication Date: 2015-11-03
- Inventor: Tyler G. Hansen , Ming-Chuan Yang , Vishal Sipani
- Applicant: Tyler G. Hansen , Ming-Chuan Yang , Vishal Sipani
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/522 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L23/532

Abstract:
An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.
Public/Granted literature
- US20130277822A1 INTERCONNECT STRUCTURES FOR INTEGRATED CIRCUITS AND THEIR FORMATION Public/Granted day:2013-10-24
Information query
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