Invention Grant
US09177914B2 Metal pad structure over TSV to reduce shorting of upper metal layer
有权
在TSV上的金属焊盘结构，以减少上层金属层的短路
- Patent Title: Metal pad structure over TSV to reduce shorting of upper metal layer
- Patent Title (中): 在TSV上的金属焊盘结构，以减少上层金属层的短路
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Application No.: US13678155Application Date: 2012-11-15
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Publication No.: US09177914B2Publication Date: 2015-11-03
- Inventor: Chung-Chuan Tseng , Chia-Wei Liu , Cindy Kuo , Ren-Wei Xiao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/528 ; H01L21/02 ; H01L23/00 ; H01L21/768
Abstract:
Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.
Public/Granted literature
- US20140131841A1 METAL PAD STRUCTURE OVER TSV TO REDUCE SHORTING OF UPPER METAL LAYER Public/Granted day:2014-05-15
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