Invention Grant
- Patent Title: Reducing thermal energy transfer during chip-join processing
- Patent Title (中): 在芯片连接处理期间减少热能传递
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Application No.: US14191857Application Date: 2014-02-27
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Publication No.: US09177931B2Publication Date: 2015-11-03
- Inventor: Stephen P. Ayotte , Sebastien Quesnel , Glen E. Richard , Timothy D. Sullivan , Timothy M. Sullivan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Hopewell Junction
- Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee Address: US NY Hopewell Junction
- Agency: Gibb & Riley, LLC
- Agent Anthony Canale
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L23/00 ; H01L23/367 ; H01L23/373

Abstract:
Embodiments of the present invention provide a semiconductor structure and method to reduce thermal energy transfer during chip-join processing. In certain embodiments, the semiconductor structure comprises a thermal insulating element formed under a first conductor. The semiconductor structure also comprises a solder bump formed over the first conductor. The semiconductor structure further comprises a second conductor formed on a side of the thermal insulating element and in electrical communication with the first conductor and a third conductor. The third conductor is formed to be in thermal or electrical communication with the thermal insulating element. The thermal insulating element includes thermal insulating material and the thermal insulating element is structured to reduce thermal energy transfer during a chip-join process from the solder bump to a metal level included in the semiconductor structure.
Public/Granted literature
- US20150243618A1 REDUCING THERMAL ENERGY TRANSFER DURING CHIP-JOIN PROCESSING Public/Granted day:2015-08-27
Information query
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