Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14150972Application Date: 2014-01-09
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Publication No.: US09177936B2Publication Date: 2015-11-03
- Inventor: Nobuyasu Muto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-002957 20100108
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/683 ; H01L21/78 ; H01L25/065 ; H01L25/00

Abstract:
Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.
Public/Granted literature
- US20140127860A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-08
Information query
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