Invention Grant
- Patent Title: Method for manufacturing semiconductor apparatus
- Patent Title (中): 半导体装置的制造方法
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Application No.: US14453922Application Date: 2014-08-07
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Publication No.: US09177938B2Publication Date: 2015-11-03
- Inventor: Motoaki Tani , Keishiro Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-40674 20110225
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/78 ; H01L23/367 ; H01L23/31 ; H01L23/13 ; H01L23/14 ; H01L23/373 ; H01L23/498 ; H01L23/66
Abstract:
A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.
Public/Granted literature
- US20150171053A1 SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC DEVICE Public/Granted day:2015-06-18
Information query
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