Invention Grant
- Patent Title: Semiconductor device with stacked power converter
- Patent Title (中): 具有堆叠功率转换器的半导体器件
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Application No.: US12960288Application Date: 2010-12-03
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Publication No.: US09177944B2Publication Date: 2015-11-03
- Inventor: Bernard J. New
- Applicant: Bernard J. New
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent Robert M. Brush; John J. King
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L25/16 ; H01L23/31 ; H01L23/48 ; H01L23/498 ; H01L23/528 ; H01L23/00
Abstract:
A semiconductor device with a stacked power converter is described. In some examples, a semiconductor device includes: a first integrated circuit (IC) die having bond pads and solder bumps, the bond pads configured for wire-bonding; and a second IC die mounted on the first IC die, the second IC die having an active side and a backside opposite the active side, the second IC die including bond pads on the active side configured for wire-bonding, and solder bumps disposed on a backside opposite the active side; where the solder bumps of the first IC die are electrically and mechanically coupled to the solder bumps of the second IC die to form bump bonds.
Public/Granted literature
- US20120139103A1 SEMICONDUCTOR DEVICE WITH STACKED POWER CONVERTER Public/Granted day:2012-06-07
Information query
IPC分类:
