Invention Grant
US09177953B2 Circular semiconductor device with electrostatic discharge (ESD) device and functional device
有权
具有静电放电（ESD）器件和功能器件的圆形半导体器件
- Patent Title: Circular semiconductor device with electrostatic discharge (ESD) device and functional device
- Patent Title (中): 具有静电放电（ESD）器件和功能器件的圆形半导体器件
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Application No.: US14069285Application Date: 2013-10-31
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Publication No.: US09177953B2Publication Date: 2015-11-03
- Inventor: Jam-Wem Lee
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
One or more semiconductor devices with an electrostatic discharge (ESD) device and a functional device in a circular arrangement are provided herein. The semiconductor device comprises a first circular sector, a second circular sector, and at least two disconnect regions disposed between the first circular sector and the second circular sector. The first circular sector comprises at least one ESD device. The second circular sector comprises at least one functional device. A single semiconductor device having a circular arrangement or configuration thus has an ESD device and a functional device.
Public/Granted literature
- US20150115366A1 CIRCULAR SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE (ESD) DEVICE AND FUNCTIONAL DEVICE Public/Granted day:2015-04-30
Information query
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