Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13855781Application Date: 2013-04-03
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Publication No.: US09177954B2Publication Date: 2015-11-03
- Inventor: Tomomitsu Risaki
- Applicant: Seiko Instruments Inc.
- Applicant Address: JP
- Assignee: SEIKO INSTRUMENTS INC.
- Current Assignee: SEIKO INSTRUMENTS INC.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2012-094089 20120417
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L27/06 ; H01L29/861 ; H01L29/06
Abstract:
A semiconductor device has a semiconductor substrate and a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate. A second conductivity type high concentration region is provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region. A first conductivity type high concentration region is provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.
Public/Granted literature
- US20130277792A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-24
Information query
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