Invention Grant
- Patent Title: Schottky clamped radio frequency switch
- Patent Title (中): 肖特基钳位射频开关
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Application No.: US14491783Application Date: 2014-09-19
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Publication No.: US09177968B1Publication Date: 2015-11-03
- Inventor: Paul A. Nygaard
- Applicant: Silanna Semiconductor U.S.A., Inc.
- Applicant Address: US CA San Diego
- Assignee: Silanna Semiconductor U.S.A., Inc.
- Current Assignee: Silanna Semiconductor U.S.A., Inc.
- Current Assignee Address: US CA San Diego
- Agency: The Mueller Law Office, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L27/06 ; H01L29/786
Abstract:
Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.
Information query
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