Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14656285Application Date: 2015-03-12
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Publication No.: US09177969B2Publication Date: 2015-11-03
- Inventor: Daisuke Kubota , Ryo Hatsumi , Masami Jintyou , Takumi Shigenobu , Naoto Goto
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2013-016257 20130130; JP2013-054014 20130315
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/12 ; H01L29/417 ; H01L29/786 ; H01L29/45
Abstract:
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
Public/Granted literature
- US20150187819A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
Information query
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