Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same, method of manufacturing display unit, and method of manufacturing electronic apparatus
- Patent Title (中): 半导体装置及其制造方法,显示装置的制造方法以及电子装置的制造方法
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Application No.: US14186170Application Date: 2014-02-21
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Publication No.: US09177970B2Publication Date: 2015-11-03
- Inventor: Koichi Amari
- Applicant: Joled Inc.
- Applicant Address: JP Tokyo
- Assignee: Joled Inc.
- Current Assignee: Joled Inc.
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2013-041728 20130304
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12

Abstract:
A semiconductor device includes: a gate electrode and a wiring; a first insulating film covering the gate electrode and the wiring; a semiconductor film opposed to the gate electrode with the first insulating film in between; a first concave section located in a position adjacent to the semiconductor film; a connection hole, the connection hole being provided in the first insulating film, and the connection hole reaching the wiring, and a first electrically-conductive film, the first electrically-conductive film being electrically connected to the wiring through the connection hole, and the first electrically-conductive film being buried in the first concave section.
Public/Granted literature
Information query
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