Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12556229Application Date: 2009-09-09
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Publication No.: US09177978B2Publication Date: 2015-11-03
- Inventor: Yoshiaki Oikawa , Shingo Eguchi
- Applicant: Yoshiaki Oikawa , Shingo Eguchi
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-239075 20080918; JP2008-239078 20080918
- Main IPC: H01L23/06
- IPC: H01L23/06 ; H01L27/12 ; H01L27/13

Abstract:
To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
Public/Granted literature
- US20100065952A1 Semiconductor Device Public/Granted day:2010-03-18
Information query
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