Invention Grant
US09177998B2 Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array
有权
形成非对称MIMCAP或Schottky装置作为横杆存储器阵列的选择器元件的方法
- Patent Title: Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array
- Patent Title (中): 形成非对称MIMCAP或Schottky装置作为横杆存储器阵列的选择器元件的方法
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Application No.: US14491080Application Date: 2014-09-19
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Publication No.: US09177998B2Publication Date: 2015-11-03
- Inventor: Venkat Ananthan , Imran Hashim , Prashant B. Phatak
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L49/02 ; H01L45/00
Abstract:
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.
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