Invention Grant
US09178013B2 Semiconductor device with edge termination and method for manufacturing a semiconductor device
有权
具有边缘终端的半导体器件和用于制造半导体器件的方法
- Patent Title: Semiconductor device with edge termination and method for manufacturing a semiconductor device
- Patent Title (中): 具有边缘终端的半导体器件和用于制造半导体器件的方法
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Application No.: US13366707Application Date: 2012-02-06
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Publication No.: US09178013B2Publication Date: 2015-11-03
- Inventor: Gerhard Schmidt
- Applicant: Gerhard Schmidt
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/06 ; H01L21/326 ; H01L21/36 ; H01L21/20 ; H01L21/479 ; H01L29/66 ; H01L29/16
Abstract:
According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the semiconductor body than the first pn-junction. The second semiconductor material is in contact with the first semiconductor material and forms part of an edge termination zone of the semiconductor device.
Public/Granted literature
- US20130200392A1 Semicondictor Device with Edge Termination and Method for Manufacturing a Semiconductor Device Public/Granted day:2013-08-08
Information query
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