Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14450674Application Date: 2014-08-04
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Publication No.: US09178017B2Publication Date: 2015-11-03
- Inventor: Kanta Saino
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Priority: JP2013-171305 20130821
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/108

Abstract:
A semiconductor device includes a first well and a second well provided within a semiconductor substrate, an isolation region disposed between the first well and the second well within the semiconductor substrate, a first wiring disposed on the first well, a second wiring disposed on the second well, a concave third wiring disposed on the isolation region, a buried insulating film disposed on the third wiring so as to fill the concave portion thereof, a plurality of fourth wirings disposed on the buried insulating film, and a contact plug disposed so as to electrically connect to at least one of the first and second wells.
Public/Granted literature
- US20150054086A1 Semiconductor Device and Method for Manufacturing Same Public/Granted day:2015-02-26
Information query
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