Invention Grant
US09178043B2 Non-planar transistors with replacement fins and methods of forming the same
有权
具有替代翅片的非平面晶体管及其形成方法
- Patent Title: Non-planar transistors with replacement fins and methods of forming the same
- Patent Title (中): 具有替代翅片的非平面晶体管及其形成方法
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Application No.: US13924364Application Date: 2013-06-21
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Publication No.: US09178043B2Publication Date: 2015-11-03
- Inventor: Ka-Hing Fung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234
Abstract:
A method includes forming a first semiconductor fin, and oxidizing surface portions of the first semiconductor fin to form a first oxide layer. The first oxide layer includes a top portion overlapping the first semiconductor fin and sidewall portions on sidewalls of the first semiconductor fin. The top portion of the first oxide layer is then removed, wherein the sidewall portions of the first oxide layer remains after the removing. The top portion of the first semiconductor fin is removed to form a recess between the sidewall portions of the first oxide layer. An epitaxy is performed to grow a semiconductor region in the recess.
Public/Granted literature
- US20140377922A1 Non-Planar Transistors with Replacement Fins and Methods of Forming the Same Public/Granted day:2014-12-25
Information query
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