Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13451777Application Date: 2012-04-20
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Publication No.: US09178051B2Publication Date: 2015-11-03
- Inventor: Man-jong Yu
- Applicant: Man-jong Yu
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0036850 20110420
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L27/105 ; H01L27/108

Abstract:
A semiconductor device includes an active region on a semiconductor substrate. The active region is defined by a device isolation layer and includes gate-recesses. The semiconductor device further includes gate electrodes in the gate-recesses, a contact recess in the active region between the gate-recesses, a cell pad that covers at least a portion of the active region between the gate-recesses and that fills at least a portion of the contact recess, and a bit line electrically connected to the cell pad.
Public/Granted literature
- US20120267712A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
Information query
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