Invention Grant
US09178065B2 Systems and methods for fabricating semiconductor devices at different levels
有权
用于制造不同级别的半导体器件的系统和方法
- Patent Title: Systems and methods for fabricating semiconductor devices at different levels
- Patent Title (中): 用于制造不同级别的半导体器件的系统和方法
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Application No.: US13956437Application Date: 2013-08-01
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Publication No.: US09178065B2Publication Date: 2015-11-03
- Inventor: Chi-Wen Liu , Chao-Hsiung Wang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/78 ; H01L29/10 ; H01L21/8234
Abstract:
Systems and methods are provided for fabricating semiconductor device structures on a substrate. For example, a substrate including a first region and a second region is provided. One or more first semiconductor device structures are formed on the first region. One or more semiconductor fins are formed on the second region. One or more second semiconductor device structures are formed on the semiconductor fins. A top surface of the semiconductor fins is higher than a top surface of the first semiconductor device structures.
Public/Granted literature
- US20150035020A1 Systems and Methods for Fabricating Semiconductor Devices at Different Levels Public/Granted day:2015-02-05
Information query
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