Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Invention Grant

US09178073B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor 有权

Title translation: 用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物

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Patent Title: Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
Patent Title (中): 用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
Application No.: US13989944

Application Date: 2011-11-28
Publication No.: US09178073B2

Publication Date: 2015-11-03
Inventor: Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
Applicant: Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
Applicant Address: JP Kobe-shi KR Yongin
Assignee: Kobe Steel, Ltd.,Samsung Display Co., Ltd.
Current Assignee: Kobe Steel, Ltd.,Samsung Display Co., Ltd.
Current Assignee Address: JP Kobe-shi KR Yongin
Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2010-264324 20101126; JP2011-008325 20110118
International Application: PCT/JP2011/077304 WO 20111128
International Announcement: WO2012/070675 WO 20120531
Main IPC: H01L29/786
IPC: H01L29/786 ; C01G19/00 ; C23C14/08 ; C23C14/34 ; H01L21/02 ; C04B35/453 ; C23C14/54 ; C23C14/58 ; C04B35/01 ; C04B35/457 ; H01L27/12

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Abstract:

This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract(Chinese):

用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）≥-0.53×[Zn] /（[Zn] + [Sn]）+0.36（1）[In] /（[In] ] + [Sn]）≥2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn]）＆ ] /（[Zn] + [Sn]） - 0.32（3）本发明能够提供实现高迁移率并具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

Public/Granted literature

US20130248855A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR Public/Granted day:2013-09-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管