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US09178085B2 Waveguide photodetector and forming method thereof 有权
波导光电探测器及其形成方法

  • Patent Title: Waveguide photodetector and forming method thereof
  • Patent Title (中): 波导光电探测器及其形成方法
  • Application No.: US13996448
    Application Date: 2011-12-22
  • Publication No.: US09178085B2
    Publication Date: 2015-11-03
  • Inventor: Bing Li
  • Applicant: Bing Li
  • Agency: Vidas, Arrett & Steinkraus
  • International Application: PCT/CN2011/084418 WO 20111222
  • International Announcement: WO2012/083862 WO 20120628
  • Main IPC: H01L31/0232
  • IPC: H01L31/0232 H01L31/18 H01L31/105 G02B6/122
Waveguide photodetector and forming method thereof
Abstract:
Techniques are described for forming a waveguide photodetector. In one example, a method of forming a waveguide photodetector includes forming a waveguide on a substrate, e.g., silicon on insulator, depositing a first oxide coating over the waveguide and on the SOI substrate, creating a seed window through the first oxide coating to a bulk silicon layer of the SOI substrate, depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide, depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the SOI substrate, and applying thermal energy to liquefy the photodetector material.
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