Invention Grant
- Patent Title: Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
- Patent Title (中): 使用量子点结构和相关结构制造半导体结构和器件的方法
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Application No.: US13377931Application Date: 2010-05-26
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Publication No.: US09178091B2Publication Date: 2015-11-03
- Inventor: Chantal Arena , Heather McFelea
- Applicant: Chantal Arena , Heather McFelea
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- International Application: PCT/US2010/036162 WO 20100526
- International Announcement: WO2011/011111 WO 20110127
- Main IPC: H01L31/0368
- IPC: H01L31/0368 ; H01L31/04 ; H01L31/18 ; H01L21/02 ; H01L31/0304 ; H01L31/0352

Abstract:
Methods of fabricating photovoltaic devices include forming a plurality of subcells in a vertically stacked arrangement on a semiconductor material, each of the subcells being formed at a different temperature than an adjacent subcell such that the adjacent subcells have differing effective band-gaps. The methods of fabricating also include inverting the structure, attaching another substrate to a second semiconductor material, and removing the substrate. For example, each of the subcells may comprise a III-nitride material, and each subsequent subcell may include an indium content different than the adjacent subcell. Novel structures may be formed using such methods.
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