Invention Grant
US09178109B2 Semiconductor light-emitting device and method of manufacturing the same 有权
半导体发光装置及其制造方法

  • Patent Title: Semiconductor light-emitting device and method of manufacturing the same
  • Patent Title (中): 半导体发光装置及其制造方法
  • Application No.: US13769373
    Application Date: 2013-02-17
  • Publication No.: US09178109B2
    Publication Date: 2015-11-03
  • Inventor: Tien Yang Wang
  • Applicant: Tien Yang Wang
  • Main IPC: H01L33/12
  • IPC: H01L33/12 H01L27/15 H01L33/20 H01L33/60
Semiconductor light-emitting device and method of manufacturing the same
Abstract:
A light-emitting device is disclosed including a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type; a first electrode connected to the lower layer of the first conductivity type; a second electrode connected to the upper layer of the second conductivity type. The light emitting structure is formed using a shell member, which comprises a planar portion and a shell portion. The extent of growth defects such as misfit dislocations is reduced and the extraction of light and heat is improved in the present device. The beam profile of the device may be altered by patterning the light emitting structure instead of shaping the entire chip. The device may be manufactured in a way more compatible with the established, cost-effective processing and packaging methods for large size wafers from the IC industry.
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