Invention Grant
- Patent Title: Semiconductor light-emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13643623Application Date: 2011-06-24
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Publication No.: US09178116B2Publication Date: 2015-11-03
- Inventor: Takashi Hodota
- Applicant: Takashi Hodota
- Applicant Address: JP Aichi
- Assignee: TOYODA GOSEI CO. LTD.
- Current Assignee: TOYODA GOSEI CO. LTD.
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-145170 20100625
- International Application: PCT/JP2011/064507 WO 20110624
- International Announcement: WO2011/162367 WO 20111229
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/42 ; H01L33/32 ; H01L33/40 ; H01L33/46

Abstract:
A semiconductor light-emitting element (1) including: an n-type semiconductor layer (140); a light-emitting layer (150); a p-type semiconductor layer (160); a transparent conductive layer (170) laminated on the p-type semiconductor layer; a reflective film (180) which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulating property and is laminated on the transparent conductive layer; a p-conductive body (200) which penetrates the reflective film and is electrically connected to the transparent conductive layer; an n-electrode (310) electrically connected to the n-type semiconductor layer; and a p-electrode (300) having a p-adhesion layer (301) which is laminated on the reflective film, is electrically connected to the other end of the p-conductive body, and is composed of the same material as that for the transparent conductive layer and a p-metal reflective layer (302) which is laminated on the p-adhesion layer.
Public/Granted literature
- US20130069095A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2013-03-21
Information query
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