According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.