Invention Grant
US09178127B2 Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition
有权
采用不需要纳米级定义的半导体材料的处理膜的塞贝克/珀尔帖热电转换装置
- Patent Title: Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition
- Patent Title (中): 采用不需要纳米级定义的半导体材料的处理膜的塞贝克/珀尔帖热电转换装置
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Application No.: US13384079Application Date: 2010-07-14
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Publication No.: US09178127B2Publication Date: 2015-11-03
- Inventor: Dario Narducci , Gianfranco Cerofolini
- Applicant: Dario Narducci , Gianfranco Cerofolini
- Applicant Address: IT Milan
- Assignee: Consorzio Delta Ti Research
- Current Assignee: Consorzio Delta Ti Research
- Current Assignee Address: IT Milan
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: ITVA2009A0050 20090715
- International Application: PCT/IB2010/001729 WO 20100714
- International Announcement: WO2011/007241 WO 20110120
- Main IPC: H01L35/22
- IPC: H01L35/22 ; H01L35/26 ; H01L37/02 ; H01L41/18 ; H01L35/32
Abstract:
The disclosure relates to Seebeck/Peltier effect thermoelectric conversion devices and in particular devices made of stack of dielectric layers alternated to treated semiconducting layers even of large size, not requiring lithographic patterning in a nano-micrometric scale.
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