Invention Grant
- Patent Title: Magnetoresistive random access memory cell and fabricating the same
- Patent Title (中): 磁阻随机存取存储器单元制造
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Application No.: US13587642Application Date: 2012-08-16
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Publication No.: US09178136B2Publication Date: 2015-11-03
- Inventor: Kuo-Ming Wu , Kai-Wen Cheng , Cheng-Yuan Tsai , Chia-Shiung Tsai
- Applicant: Kuo-Ming Wu , Kai-Wen Cheng , Cheng-Yuan Tsai , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L43/08
Abstract:
The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a tunneling layer disposed over the pinned layer, a free layer disposed over the tunneling layer and a capping layer disposed over the free layer. The capping layer includes metal-oxide and metal-nitride materials.
Public/Granted literature
- US20140048893A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY CELL AND FABRICATING THE SAME Public/Granted day:2014-02-20
Information query
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