Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US13963682Application Date: 2013-08-09
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Publication No.: US09178137B2Publication Date: 2015-11-03
- Inventor: Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
- Applicant: Youngmin Eeh , Katsuya Nishiyama , Daisuke Ikeno , Toshihiko Nagase , Tadashi Kai , Daisuke Watanabe
- Agency: Holtz, Holtz, Goodman & Chick PC
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/12 ; H01L27/22

Abstract:
A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.
Public/Granted literature
- US20140284539A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2014-09-25
Information query
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