Invention Grant
US09178419B2 Power source circuit including transistor with oxide semiconductor
有权
电源电路包括具有氧化物半导体的晶体管
- Patent Title: Power source circuit including transistor with oxide semiconductor
- Patent Title (中): 电源电路包括具有氧化物半导体的晶体管
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Application No.: US13082459Application Date: 2011-04-08
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Publication No.: US09178419B2Publication Date: 2015-11-03
- Inventor: Yoshiaki Ito , Takuro Ohmaru
- Applicant: Yoshiaki Ito , Takuro Ohmaru
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-095197 20100416
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H02M3/157 ; G09G3/10

Abstract:
An object is to reduce degradation of circuit operation and to reduce the area of the entire circuit. A power source circuit is provided with a first terminal to which first voltage is input; a second terminal to which second voltage is input; a comparator being connected to the first terminal and the second terminal and comparing the first voltage and the second voltage; a digital circuit averaging, integrating, and digital pulse width modulating a first digital signal output from the comparator; a PWM output driver amplifying a second digital signal output from the digital circuit; and a smoothing circuit smoothing the amplified second digital signal.
Public/Granted literature
- US20110254523A1 POWER SOURCE CIRCUIT Public/Granted day:2011-10-20
Information query
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