Invention Grant
- Patent Title: Establishing a thermal profile across a semiconductor chip
- Patent Title (中): 建立跨半导体芯片的热分布
-
Application No.: US14221859Application Date: 2014-03-21
-
Publication No.: US09178495B2Publication Date: 2015-11-03
- Inventor: Terence B. Hook , Christopher M. Schnabel , Melanie J. Sherony
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Hopewell Junction
- Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee Address: US NY Hopewell Junction
- Agency: Gibb & Riley, LLC
- Agent Anthony Canale
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H03K3/011 ; H01L23/34 ; H01L49/02 ; H01L23/48 ; H01L21/768 ; H01L25/065

Abstract:
Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.
Public/Granted literature
- US20150270828A1 ESTABLISHING A THERMAL PROFILE ACROSS A SEMICONDUCTOR CHIP Public/Granted day:2015-09-24
Information query
IPC分类: